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Electrically bistable and non-volatile memory devices based on p-toluenesulfonic-doped poly(triphenylamine)†
Hongling Li,Yu Zhu,Xuduo Bai
RSC Advances Pub Date : 03/02/2016 00:00:00 , DOI:10.1039/C6RA01410K
Abstract

Two novel poly(triphenylamines) (PTPAs) were prepared from 1,4-dibromobenzene, 4,4′-dibromodiphenyl ether and 4-phenoxyaniline, by a Buchwald–Hartwig coupling reaction. The structures of the resulting polymers were fully characterized by FTIR and 1H NMR. These PTPAs are thermally stable with 5% weight loss over 450 °C and the glass transition temperature (Tg) was found to be 140–149 °C. The resistive switching devices with the configuration Al/PTPA-TsOH/ITO were constructed using the conventional solution coating process. The devices demonstrated bi-directionally switchable WORM memory behavior. The ON/OFF current ratio of these devices was about 106 and the retention times can be as long as 104 s. The mechanism of the resistance switching effects of the devices can be understood on the basis of the electric field-induced doping effect, which would provide a guideline for designing new materials with high-performance memories.

Graphical abstract: Electrically bistable and non-volatile memory devices based on p-toluenesulfonic-doped poly(triphenylamine)
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