To investigate the effect of Li dopant on the electrical characteristics under negative bias stress (NBS), we analysed ZnO TFTs and Li doped ZnO TFTs under NBS at −20 V for 10 800 s. The Li dopant enhanced the field effect mobility (8.21 cm2 V−1 s−1) and successfully sustained the variation in the Von of the ZnO TFT without any degradation of the field effect mobility.
