Filament theory based WORM memory devices using aluminum/poly(9-vinylcarbazole)/aluminum structures†
Aswin Suresh,Govind Krishnakumar,Manoj A. G. Namboothiry
Physical Chemistry Chemical Physics Pub Date : 05/27/2014 00:00:00 , DOI:10.1039/C4CP01305K
Abstract

Spin coated poly(N-vinylcarbazole) (PVK) sandwiched between thermally evaporated aluminum (Al) electrodes on a glass substrate showed unipolar Write Once Read Many times (WORM) characteristics. The pristine devices were in the low resistance ON state exhibiting ohmic behavior and at a voltage near −2 V, they switched abruptly to the high resistance OFF state showing space charge limited current (SCLC). We suggest that the rupturing of metallic filaments due to Joule heating may explain the effect. The WORM devices exhibited an ON/OFF ratio of 108, a retention of 1000 s and an endurance of ∼106 cycles in both ON and OFF states.

Graphical abstract: Filament theory based WORM memory devices using aluminum/poly(9-vinylcarbazole)/aluminum structures