By the combination of electrochemical deposition of a high-quality Cu₂ZnSnS₄ (CZTS) thin film photoabsorber and low-temperature spray deposition of Ga-doped ZnO (GZO) transparent conductive oxide, we fabricated a non-vacuum-processed CZTS solar cell. Despite various unoptimized parameters for the TCO layer, such as deposition temperatures and control of film thicknesses, we could obtain the best conversion efficiency of 6.43% with a short circuit current density, an open circuit voltage and a fill factor of 16.6 mA cm⁻², 678 mV and 0.571, respectively.