960化工网
Furan fused V-shaped organic semiconducting materials with high emission and high mobility†
Katsumasa Nakahara,Chikahiko Mitsui,Masakazu Yamagishi,Hiroyuki Matsui,Takanari Ueno,Yuji Tanaka,Masafumi Yano,Takeshi Matsushita,Yuri Hirose,Hiroyasu Sato,Akihito Yamano
Chemical Communications Pub Date : 11/08/2013 00:00:00 , DOI:10.1039/C3CC47577H
Abstract

We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2′,3′-d]furan (DNF–V) derivatives. DNF–V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF–V derivatives showed an excellent carrier mobility of up to 1.3 cm2 V−1 s−1, thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.

Graphical abstract: Furan fused V-shaped organic semiconducting materials with high emission and high mobility
平台客服
平台客服
平台在线客服