A new system for synthesis of high quality nonpolar GaN thin films†
Shao-Ju Shih,Zhengyi Fu
Chemical Communications Pub Date : 12/10/2009 00:00:00 , DOI:10.1039/B919722B
Abstract
High quality nonpolar m-plane GaN films were successfully grown on LiGaO2 (100) substrates for the first time. This m-plane GaN/LiGaO2 (100) system opens a new approach for realizing highly-efficient nitride devices.
