Here we report the development of a self-powered high-speed perovskite Schottky junction photodiode, which is very important for next-generation electronic devices. The ITO/perovskite Schottky junction diode yielded a rectification behaviour with a low value of reverse saturation current under dark conditions, and a zero bias photocurrent when illuminated. The fabricated photodiode exhibited a high photosensitivity with fast response and recovery times. The origin of the high photocurrent in the fabricated photodiode was analysed by making a log–linear plot of its current–voltage characteristics. The study also demonstrated the efficient charge transport properties of the CH₃NH₃Pbl₃ semiconductor material with the photogenerated electrons injected into the ITO contact and the holes injected into the gold contact. The obtained results provide a way to fabricate an efficient self-bias photodiode for future electronic devices.