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Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition
Hyunjea Lee,Woong Choi,Weidong Fei
RSC Advances Pub Date : 05/26/2017 00:00:00 , DOI:10.1039/C7RA03642F
Abstract

We report the synthesis of large-scale continuous MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD). As-grown thin films were composed of a continuous monolayer of MoSe2 and extended up to a millimeter scale. The CVD-grown monolayer MoSe2 films were uniform in thickness and highly crystalline with hexagonal crystal structures. Raman and photoluminescence spectra showed that CVD-grown monolayer MoSe2 films have similar vibrational and optical properties to those of mechanically exfoliated monolayer MoSe2. These results demonstrate that the CVD-grown monolayer MoSe2 films have reasonably high quality comparable to that of mechanically exfoliated monolayer MoSe2 flakes.

Graphical abstract: Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition
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