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Interface passivation to overcome shunting in semiconductor–catalyst junctions†
Parisa Shadabipour,Thomas W. Hamann
Chemical Communications Pub Date : 01/27/2020 00:00:00 , DOI:10.1039/C9CC09597G
Abstract

High-performance mesoporous hematite photoanodes modified with a conductive water oxidation catalyst, Ni0.75Fe0.25OxHy, for photoelectrochemical water oxidation are limited by shunting. We present a general method to overcome shunting via the selective electrodeposition of a thin poly(phenylene oxide) (PPO) insulating layer onto the exposed transparent conductive oxide substrate following catalyst deposition.

Graphical abstract: Interface passivation to overcome shunting in semiconductor–catalyst junctions
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