960化工网
Irradiation damage of helium-accumulated vanadium: atomic simulations
Canglong Wang,Nengwen Hu,Wangyu Hu,Wenshan Duan
RSC Advances Pub Date : 08/26/2016 00:00:00 , DOI:10.1039/C6RA16590G
Abstract

Molecular dynamics simulations have been implemented to gain insight into the displacement cascades in vanadium containing substitutional He atoms with several different concentrations from 0.2 to 1.0 at%. The dependence of displacement cascades on the irradiation temperature (300 and 600 K) and energy of the primary knock-on atom (from 5 to 40 keV) have been analysed. It was shown that the number of Frenkel pairs increases with the increase of the energy of the primary knock-on atom. The increasing rate of the number of Frenkel pairs at 600 K is lower than that at 300 K. The predominant attention has been focused on the formation of He-vacancy clusters. The obtained results show that the number of He-vacancy clusters increases with the increase in He concentration and the energy of the primary knock-on atom. The largest size of He-vacancy is independent on the energy of the primary knock-on atom and the irradiation temperature at low He concentrations. The configurations of small He-vacancy clusters are different from those in iron. The He atoms in He-vacancy clusters prefer to occupy the tetrahedral interstitial sites rather than the octahedral interstitial sites.

Graphical abstract: Irradiation damage of helium-accumulated vanadium: atomic simulations
平台客服
平台客服
平台在线客服