Molecular diodes enabled by quantum interference†
Arunabh Batra,Jeffrey S. Meisner,Qishui Chen,Michael L. Steigerwald,Colin Nuckolls,Latha Venkataraman
Faraday Discussions Pub Date : 06/17/2014 00:00:00 , DOI:10.1039/C4FD00093E
Abstract

We use scanning tunneling microscope break-junction (STM-BJ) measurements to study the low-bias conductance and high-bias current–voltage (IV) characteristics of a series of asymmetric parameta connected diphenyl-oligoenes. From tight-binding calculations, we determine that the quantum interference features inherent in our molecular design result in a ‘through-bond’ coupling on the para-side, and through-space coupling on the meta-side. We show that these molecular junctions form single molecule diodes, and show that the rectification results from a difference in the voltage dependence of the coupling strength on the through-bond and the through-space side. The interplay between the applied voltage and the molecule–metal coupling results from the asymmetric polarizability of the conducting orbital under an external field.