Since graphene was successfully exfoliated, intercalation has been reviewed from bulk materials to two-dimensional counterparts. Here 1T phase Cu–TaS₂ was successfully prepared via intercalating Cu into 2D layered TaS₂ based on a solution method, which cannot damage the crystal structure of the target material and can realize uniform intercalation with a large amount of dopants. The electrical conductivity of 2D TaS₂ intercalated by Cu has an obvious increase compared with 2D TaS₂. Considering the peculiar metal–insulator transitions (MITs) of TaS₂, our work may provide new opportunities for future superconductor and CDW-based memory devices.