Ferroelectric polymers are among the most promising materials for flexible electronic devices. Highly ordered arrays of the defect-modified ferroelectric polymer P(VDF–TrFE–CFE) (poly(vinylidene fluoride–trifluoroethylene–chlorofluoroethylene)) are fabricated by nanoimprint lithography for nonvolatile memory application. The defective CFE units reduce the coercive field to one-fifth of that of the un-modified P(VDF–TrFE), which can help minimize the energy consumption and extend the lifespan of the device. The nanoimprint process leads to preferable orientation of polymer chains and delicately controlled distribution of the defects, and thus a bi-stable polarization that makes the memory nonvolatile, as revealed by the pulsed polarization experiment.