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Physical model of threshold switching in NbO2 based memristors
S. Slesazeck,H. Mähne,H. Wylezich,A. Wachowiak,J. Radhakrishnan,A. Ascoli,R. Tetzlaff
RSC Advances Pub Date : 11/24/2015 00:00:00 , DOI:10.1039/C5RA19300A
Abstract

This paper investigates the origin of the threshold switching effect in NbO2. It is found that the effect is independent of the metal-insulator-transition but can be explained by a trap-assisted Frenkel–Poole like conduction mechanism in combination with a moderate temperature increase by only 150 K due to Joule heating. These findings lead to the development of a physics based model which is of pure electrical nature and explains the occurrence of the threshold effect as well as the negative-differential resistance behavior observed in NbO2.

Graphical abstract: Physical model of threshold switching in NbO2 based memristors
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