Networks of metal nanowires (NWs) have the highest performance of any solution-coatable material to replace expensive indium tin oxide (ITO) as the transparent conducting electrode material in next-generation devices. However, there is as yet no published process for producing NW films with an optoelectronic performance that exceeds that of ITO. Here, we examine a process for the synthesis and purification of uniform AgNWs that, when coated using a spin-coating technique to create a transparent conducting film, show properties that exceed those of ITO. The morphology AgNWs can be controlled by adjusting the concentration of silver nitrate (AgNO₃) and [PVP] to [AgNO₃] molar ratio. AgNWs with average diameters of 20 nm and aspect ratios >1000 were obtained by adding 30.5 mM of AgNO₃ and 6 : 1 molar ratio of [PVP] to [AgNO₃] in a silver nanowire synthesis, but these NWs were contaminated by some Ag nanoparticles. Selective precipitation was used to purify the NWs from nanoparticles, resulting in a transmittance improvement as large as 2%. The transmittance of the purified AgNW film was 97.5% at a sheet resistance of below 70 Ω sq⁻¹. The synthesized and purified AgNWs were analyzed by field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible-near-infrared (UV-Vis-NIR) spectroscopy and four-point-probe technique.