960化工网
Strength of electronic decoupling of fullerene on an AuSiX layer formed on Au(111)†
Kewei Sun
Physical Chemistry Chemical Physics Pub Date : 02/19/2021 00:00:00 , DOI:10.1039/D0CP05764A
Abstract

Electronic properties of molecules and carbon nanomaterials are usually affected by metal substrates. An electronic decoupling buffer layer is of importance to reveal their intrinsic properties. Here, the strength of electronic decoupling by a gold silicide buffer layer formed on Au(111) was studied using scanning tunneling microscopy/spectroscopy. The HOMO–LUMO gap of fullerene adsorbed on the buffer layer is approximately 3.0 eV, which is in between that on bare Au(111) and on a NaCl bilayer film, indicating a moderate decoupling.

Graphical abstract: Strength of electronic decoupling of fullerene on an AuSiX layer formed on Au(111)
平台客服
平台客服
平台在线客服