GaAs nanocrystals embedded in amorphous Al2O3 thin film are fabricated using pulsed laser deposition and rapid thermal annealing methods. Enhanced charge storage properties of strained GaAs nanocrystals embedded in Al2O3 high-k dielectric are observed. The GaAs nanocrystal experiences substantial compressive strain from the Al2O3 matrix, which is revealed by finite element calculations. The defects associated with the strained nanocrystals interfaces can capture charges and serve as charge storage centers, causing improvement in the charge storage performance. Therefore, these results demonstrate that the charge traps associated with the strained nanocrystals interfaces can manipulate the charge storage properties of the nanocrystals embedded in Al2O3 high-k dielectric materials.
