Multilevel data ferroelectric storage memory is a breakthrough for addressing low density in ferroelectric random access memories. However, the application of the multilevel data ferroelectric storage memory is limited by high cost and difficulty to prepare high quality epitaxial films. Herein, we create a multilevel data ferroelectric storage memory with a non-epitaxial ferroelectric ultrathin film to overcome these issues. Through controlling the polarization switching and oxygen vacancy migration with the voltage pulses, we demonstrated that voltage-controlled barrier heights yield a memristive behavior with resistance variations. Moreover, we achieved eight logic states, which are written and read easily. Our results suggest new opportunities for ferroelectrics as high density non-volatile memories.