960化工网
Ultraviolet photoelectrical properties of a n-ZnO nanorods/p-diamond heterojunction
Hongdong Li,Shaoheng Cheng,Qiliang Wang,Junsong Liu,Qinglin Wang,Chong Han,Kai Chen,Yuewu Pan
RSC Advances Pub Date : 05/26/2015 00:00:00 , DOI:10.1039/C5RA06054K
Abstract

The ultraviolet (UV) photoresponse properties of a n-ZnO nanorods/p-diamond heterojunction were investigated by studying the dark and photo IV characteristics. It shows typical rectifying behavior with a rectification ratio of 3.2 and 8.8 at 5 V for the dark current and the photocurrent, respectively. The turn on voltage under UV illumination is three times lower than that under the dark current and the ideality factor of the device is decreased. The forward current under UV illumination is more than 4 times higher than the dark one at 10 V whereas the leakage current shows a little increase at −10 V. The electrical transport behaviors are investigated both under the dark current and the photocurrent. The photogenerated charges and their transfer processes were analyzed by surface photovoltage (SPV) measurements.

Graphical abstract: Ultraviolet photoelectrical properties of a n-ZnO nanorods/p-diamond heterojunction
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