Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors†,10.1039/C5RA20414C

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Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors†

N. Haustein,L. Baraban,J. Thiele

RSC Advances Pub Date : 10/29/2015 00:00:00 , DOI:10.1039/C5RA20414C

Abstract

We present a simple method to microfluidically align and trap 1D nanostructures from suspension at well-defined positions on a receiver substrate for the fabrication of single-nanowire field effect transistors (NW FETs). Our approach allows for subsequent contacting of deposited NWs via standard UV-lithography. We demonstrate that silicon as well as copper(II) oxide NWs can be processed, and that up to 13 out of 32 designated trapping sites are occupied with single-NW FETs.