Two new NDTI-based triad-type ambipolar molecular semiconductors (NDTI-BBT and NDTI-BNT) were designed and synthesized. The triads can afford solution-processed OFETs with well-balanced, high hole and electron mobilities, up to 0.25 and 0.16 cm2 V−1 s−1, respectively, which further leads to the successful demonstration of complementary-like inverters with high voltage gains of 281 and 254 in the first and third quadrants, respectively, under ambient conditions.
