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Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6†
Sara Bonomi,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi
RSC Advances Pub Date : 08/03/2020 00:00:00 , DOI:10.1039/D0RA04680A
Abstract

We report on the successful application of RF-magnetron sputtering to deposit, by using a single type of target, three different materials in the form of thin films within the Cs–Sn–Br compositional range, namely, CsSnBr3, CsSn2Br5 and Cs2SnBr6. It is shown that, by playing with the deposition parameters and post-deposition treatments, it is possible to stabilize these three perovskites or perovskite related compounds by exploiting the versatility of vapor phase deposition. Full characterization in terms of crystal structure, optical properties and morphology is reported. The power of vapor phase methods in growing all-inorganic materials of interest for photovoltaic and optoelectronic applications is demonstrated here, indicating the advantageous use of sputtering for these complex materials.

Graphical abstract: Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6
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