Light-stimulated artificial synapses based on Si-doped GaN thin films†
Youhan Mo,Bingcheng Luo,Huijuan Dong,Boyu Hou
Journal of Materials Chemistry C Pub Date : 08/11/2022 00:00:00 , DOI:10.1039/D2TC02168D
Abstract

Development of biologically inspired devices with artificial intelligence capabilities is critical for neuromorphic computing to break away from the current performance-limiting issues in a traditional von Neumann computing architecture. Optoelectronic synaptic devices, one of the biologically inspired neuromorphic devices, are attracting ever-increasing attention, but the active materials they contain restrict their practical applications. In this work, we demonstrate a simple, two-terminated, light-stimulated synaptic device based on GaN thin films due to their stable room-temperature persistent photoconductivity, large integration potential, and high compatibility with semiconductor technology. Such a GaN-based synaptic device has the capability of emulating multiple functionalities of biological synapses including the paired-pulse facilitation, the transition from short-term memory to long-term memory, and the cognitive behavior.

Graphical abstract: Light-stimulated artificial synapses based on Si-doped GaN thin films