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Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility†
Zhuoxun Jiang,Wei Ruan,Heyuan Zhu,Guoqi Zhang,Junyong Kang,Tong-Yi Zhang,Junhao Chu
Journal of Materials Chemistry C Pub Date : 05/09/2022 00:00:00 , DOI:10.1039/D2TC90092K
Abstract

Correction for ‘Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility’ by Congcong Ma et al., J. Mater. Chem. C, 2022, DOI: http://doi.org/10.1039/d1tc05324h.

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