Study of the morphological, optical, structural and electrical properties of silicon nanowires at varying concentrations of the catalyst precursor†,10.1039/D1MA01145F

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Study of the morphological, optical, structural and electrical properties of silicon nanowires at varying concentrations of the catalyst precursor†

Sadhna Rai,Rabina Bhujel,Manas Kumar Mondal,Bibhu Prasad Swain,Joydeep Biswas

Materials Advances Pub Date : 02/07/2022 00:00:00 , DOI:10.1039/D1MA01145F

Abstract

Silicon nanowires (SiNWs) were grown by metal-assisted chemical etching of a p-type (100) silicon wafer. AgNO₃ was used as a precursor for the metal catalyst (Ag). The concentration of AgNO₃ was varied for studying the properties of SiNWs. SiNWs with the longest length (11.49 μm) and smallest diameter (55.05 nm) were obtained by using 20 mmol of AgNO₃ (20S). Their optical properties were studied using UV-Vis spectroscopy. The SiNWs showed space charge limited conduction characteristics. An ideality factor and a barrier height of 2.92 and 0.93 eV, respectively, were obtained for the 20S sample.