960化工网
Correlation between the electronic structures of transition metal oxide-based intermediate connectors and the device performance of tandem organic light-emitting devices
Qin-Ye Bao,Jin-Peng Yang,Yan Xiao,Yan-Hong Deng,Shuit-Tong Lee,Yan-Qing Li,Jian-Xin Tang
Journal of Materials Chemistry Pub Date : 09/26/2011 00:00:00 , DOI:10.1039/C1JM12515J
Abstract

The impact of electronic structures on the functionality of transition metal oxide-based intermediate connectors for tandem organic light-emitting devices is investigated by studying the interfaces and the corresponding devices. For a typical transition metal oxide-based intermediate connector, consisting of a heterointerface between MoO3 and Mg-doped tris(8-quinolinolato)aluminum (Mg:Alq3), it is identified that MoO3 is essential to the charge generation and separation process, which occurs at the interface between MoO3 and the adjacent hole-transporting layer (HTL) viaelectron transfer from the highest occupied molecular orbital of the HTL into the conduction band of MoO3. In addition, the incorporation of a Mg:Alq3 layer is indispensable to the functionality of the intermediate connector, which not only facilitates the electron injection from MoO3 into the electron-transporting layer of the adjacent electroluminescent (EL) unit, but also blocks the leakage of holes across the intermediate connector into the HTL of the other adjacent EL unit.

Graphical abstract: Correlation between the electronic structures of transition metal oxide-based intermediate connectors and the device performance of tandem organic light-emitting devices
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