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High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure†
Masashi Mamada,Jun-ichi Nishida,Daisuke Kumaki,Shizuo Tokito,Yoshiro Yamashita
Journal of Materials Chemistry Pub Date : 06/04/2008 00:00:00 , DOI:10.1039/B801425F
Abstract

A novel semiconductor with naphtho[2,3-b]thiophene rings was synthesized and characterized by using single crystal X-ray structure analysis, absorption and emission spectra, electrochemical measurements, quantum chemical calculations, thin-film X-ray diffraction and AFM studies. FET devices using the molecule as the active layer showed high mobilities and high air stability. The hole mobility was enhanced to 0.67 cm2V−1 s−1 in air.

Graphical abstract: High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure
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