CeF₃ thin films have been deposited on Si(100) substrates by metal–organic chemical vapor deposition (MOCVD). The Ce(hfa)₃·diglyme [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, diglyme = (CH₃O(CH₂CH₂O)₂CH₃)] precursor has been adopted as a single source for both Ce and F components. This adduct has proved to be a good and reliable precursor, suitable for evaporation from the liquid phase due to its rather low melting point (75 °C).

The structural, compositional, morphological and spectroscopic properties of the films have been investigated by X-ray diffraction (XRD), wavelength dispersion X-ray analysis (WDX), scanning electron microscopy (SEM) and luminescence spectroscopy.