Bimetallic phosphide decorated Mo–BiVO4 for significantly improved photoelectrochemical activity and stability†
Danyang Liu
RSC Advances Pub Date : 05/20/2019 00:00:00 , DOI:10.1039/C9RA02105A
Abstract

Bismuth vanadate photoanode has shown great potential for photoelectrochemical (PEC) catalysis, but it needs to be further modified because of its relatively low charge-separation efficiency and poor stability. Herein, the bimetallic phosphide NiCoP decorated Mo–BiVO4 is fabricated through the electrodeposition and drop-casting method, which significantly improves the charge separation and surface oxidation reaction. Therefore, the fabricated NiCoP/Mo–BiVO4 photoanode exhibits a low onset potential of 0.21 V (vs. RHE) and high photocurrent of 3.21 mA cm−2 at 1.23 V (vs. RHE), which is 3.12 times higher than that of pure BiVO4. Importantly, the decoration of NiCoP significantly improve the stability of BiVO4 photoanode.

Graphical abstract: Bimetallic phosphide decorated Mo–BiVO4 for significantly improved photoelectrochemical activity and stability