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Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface†
Hiroaki Maeda,Ryota Sakamoto,Yoshihiko Nishimori,Junya Sendo,Fumiyuki Toshimitsu,Yoshinori Yamanoi,Hiroshi Nishihara
Chemical Communications Pub Date : 07/01/2011 00:00:00 , DOI:10.1039/C1CC12832A
Abstract

Linear and branched Fe(tpy)2 complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.

Graphical abstract: Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface
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