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Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor†
Seán T. Barry,Peter G. Gordon,Matthew J. Ward,Mikko J. Heikkila,Wesley H. Monillas,Glenn P. A. Yap,Mikko Ritala,Markku Leskelä
Dalton Transactions Pub Date : 08/16/2011 00:00:00 , DOI:10.1039/C1DT10877H
Abstract

A new homoleptic sublimable indium(III) guanidinate, (In[(NiPr)2CNMe2]3 (1), was synthesized from a facile high-yield procedure. Compound 1 crystallized is a P[1 with combining macron] space group; a = 10.5989(14) Å, b = 11.0030(15) Å, c = 16.273(2) Å, α = 91.190(2)°, β = 96.561(2)°, γ = 115.555(2)°; R = 3.50%. Thermogravimetric analysis showed 1 to produce elemental indium as a residual mass. Thermolysis in a sealed NMR tube showed carbodiimide and protonated dimethyl amine by 1H NMR. Chemical vapour deposition experiments above 275 °C with air as the reactant gas showed 1 to readily deposit cubic indium oxide with good transparency.

Graphical abstract: Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor
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