Physica E: Low-dimensional Systems and Nanostructures

期刊名称：Physica E: Low-dimensional Systems and Nanostructures

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Effects of oxygen addition on properties of an amorphous Co–Ta–B system

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-06-24 , DOI: 10.1016/j.physe.2023.115785

ShuoqianZhang,ZhenPeng,MinyiShi,KefuYao,ZhengjunZhang,NaChen

Generally, amorphous alloys with metallic luster are mechanically strong and tough, whereas they are optically opaque. In contrast, amorphous metal oxides are optically transparent, whereas they show very low fracture toughness due to their intrinsic brittleness. Introducing oxygen into amorphous alloys enables formation of multifunctional amorphous materials, which combine high strength of amorphous alloys and optical properties of amorphous metal oxides. Using this strategy, a series of amorphous thin films were developed via oxygen manipulation in an amorphous Co–Ta–B system. The effects of oxygen addition on the optical properties of the amorphous Co–Ta–B–O thin films have been investigated systematically. Optical transmittance of these thin films increases with increasing the oxygen content. Integrating the transparent Co23·17Ta9·20B16·94O50.69 thin film with Si substrate forms a bilayer structure to display various colors via a simple thin film interference effect. In addition to the optical properties, the Co24·37Ta6·96B24·99O43.69 thin film with dual-phase nanostructure show a combination of high hardness of ∼7.49 GPa and a high H/E ratio of 0.062, representing good wear resistance. Our results offer a simple means to produce mechanically strong amorphous thin films with attractive optical properties, which show potential as advanced surface coatings to meet the requirements for high hardness and decorative appearance.

Computational search for efficient single-photon emitters among the substitutional doping defects in two-dimensional GaSe

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-06-20 , DOI: 10.1016/j.physe.2023.115782

SergeyStolbov,RumanaZahir

Single photon emitters (SPE) in the near-infrared (NIR) spectrum range are critical elements in quantum communication technology. We apply here computational methods to reveal local defects in the GaSe monolayer with properties favorable for such SPEs. Based on an educated guess, we selected twelve defects YX in GaSe, where the Y dopant substitutes the X host atom, X = Ga or Se, and Y = C, Si, Ge, N, P, or As. Our calculations show that two defects, NGa, and PGa, are dynamically unstable. For the remaining defects, we apply the linear response GW method and Bethe-Salpeter equation (BSE) to calculate the electronic structure and optical excitation spectra. Some defects are found to have two sharp peaks (occupied and unoccupied) of the density of the electronic states within the band gap. The NSe-, PSe-, and AsSe-defects have intense sharp an optical excitation peak at energies around 0.8 eV (λ = 1550 nm). Analysis of the formation of the BSE eigenstates associated with these peaks suggests that these excitations can cause a narrow zero-phonon line emission. We thus propose the NSe-, PSe-, and AsSe-defects in the GaSe monolayer as promising SPE in NIR region.

Possible one-dimensional mobility edge in a periodic solid-state superlattice

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-06-17 , DOI: 10.1016/j.physe.2023.115779

H.Cruz

In this work, we developed a one-dimensional tight-binding model to study conductivity in solid-state superlattices. We investigated the localization properties of a tight-binding equation where the on-site potential is replaced by both quasiperiodic and periodic functions. We compared the metal–insulator transitions obtained using a periodic potential with an external electric field and an Aubry–André potential, which is the only known case of a 1D model with a mobility edge. For the case of a periodic potential, we found the existence of a similar mobility edge if the applied electric field is small enough. In such a case, the extended and localized states in the superlattice can be controlled by an external source.

Topological behaviors in Kondo insulators

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-06-06 , DOI: 10.1016/j.physe.2023.115775

Ying-ZheLee,Shih-JyeSun

Since Kondo insulators are simultaneously subject to time-reversal symmetry and spatial antisymmetry, topological interactions exhibit topological Kondo insulating properties. To investigate the topological behaviors, we proposed a topologically interacting Kondo model with the slave-boson mean-field approximation in a square lattice ribbon. Different phases arise in different topological interactions and itinerant electron densities. In particular, the Kondo effect disappears at the edges in the Kondo and topological Kondo insulating phases. In the topological Kondo states, the conducting edge band is non-linear.

Comparison of the magneto-optical properties of the HgS, GaSb, and GaAs materials of the Pöschl–Teller quantum wells

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-04-24 , DOI: 10.1016/j.physe.2023.115741

NguyenDinhHien

In this study, a detailed comparison of magneto-optical (MO) properties of HgS, GaSb, and GaAs Pöschl–Teller quantum wells (PTQWs) is studied based on the optically detected magneto-phonon resonance (ODMPR) effect. Utilizing the operator projection method and profile technique, the MO-absorption power (AP) in the PTQWs and the full width at half maximum (FWHM) of the ODMPR-peaks due to the LO-phonons absorption and emission are calculated respectively. The results of the research show that the FWHM of the LO-phonon emission ODMPR-peak in the PTQW is always smaller than that of the LO-phonon absorption ODMPR-peak for both the three GaAs, HgS, and GaSb materials. In particular, the results also demonstrate that for the PTQW model, the MO-properties of the HgS material are remarkably different from those of the GaAs and GaSb materials, namely: (i) The FWHM of the LO-phonon emission ODMPR-peak in the PTQW is always smaller than that of the LO-phonon absorption ODMPR-peak. (ii) For the variation of the FWHM with the width of the PTQW, the concentration of the electron, and the temperature of the electron system: in the LO-phonon absorption ODMPR-peak case, the FWHM of the GaAs material is the largest, while that of the GaSb material is the smallest among the three GaAs, HgS, and GaSb materials; whereas, in the LO-phonon emission ODMPR-peak case, the FWHM of the HgS material is the largest, while that of the GaSb material is the smallest among the three GaAs, HgS, and GaSb materials. (iii) For the variation of the FWHM with the magnetic field: the FWHM of both the LO-phonons absorption and emission ODMPR-peaks in the PTQW of the HgS material is always the largest, while that of the GaSb material is always the smallest among the three GaAs, HgS, and GaSb materials.

New group II-V monolayers with suitable band gap, high carrier mobility and excellent optical absorption ability of visible light

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-05-04 , DOI: 10.1016/j.physe.2023.115748

XiaohuiDeng,LiemaoCao,JingZeng,ZhenkunTang

A suitable band gap together with high carrier mobility are very important for modern electronic device. Phosphide has being an ideal candidate since black phosphor was successfully fabricated in experiment. Here, we had successfully predicted a new class of MX2 (M = Ca, Sr, X = P, As) monolayers that had ideal band gaps as well as high carrier mobility comparable with black phosphor. Furthermore，these monolayers exhibit excellent absorption ability for visible light. This work provided another possibility to acquire new materials as high-speed electronic devices or optoelectronic devices.

Thermodynamic properties and entropy information of fermions in the Rindler spacetime

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-04-29 , DOI: 10.1016/j.physe.2023.115747

A.R.P.Moreira

In this article, the statistical properties of fermions in Rindler spacetime are studied, using Shannon’s quantum information and thermodynamic properties. For this, the wave solutions and the compact expression for the energy spectrum associated with the Dirac equation in a non-inertial frame are found. It is shown that the non-inertial effect of the accelerated frame mimics an external potential in the Dirac equation and, in addition, allows the formation of bound states. Using the wave solutions, the quantum entropy of the system is analyzed in position and momentum space. Furthermore, with the energy spectrum, the thermodynamic properties of the system are analyzed. Considering the results of these statistical properties, it is possible to understand the influence of the acceleration of the non-inertial frame on quantum information.

Regulation of the spin orbit coupling by changing the doping ratio x in the surface of monolayer (SxSe1-x)MSe

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-04-12 , DOI: 10.1016/j.physe.2023.115734

YuanyuanShen,CaimeiLi,JiajunDeng,RuonanLi,WenjieWang,FangchaoLu,XinWang,XunleiDing

In contrast to the conventional MX2 with mirror symmetry, Janus MXY (M = Mo, W; X = S, Se; Y= S, Se; X≠Y) breaks the mirror symmetry along the direction perpendicular to the two-dimensional material plane, reducing the overall symmetry. The electronegativity differences between X and Y produce an intrinsic electric dipole and cause a built-in electric field, resulting in strong spin-orbit coupling (SOC). Using first-principles density functional theory (DFT) calculations, we investigated the spin-orbit coupling induced by changing the doping ratio x on the surface of the monolayer (SxSe1-x)MSe. The band structures of the monolayer (SxSe1-x)MSe with different S/Se ratios were investigated with and without SOC. In addition to Zeeman-type spin splitting and valley polarisation at the K point, Rashba-type spin splitting around the point Γ was observed. Moreover, Rashba parameters αR of monolayer (SxSe1-x)MSe can be tuned by changing the doping ratio x of the surface.

Correlation between strain tunable piezoelectricity and Rashba effect in flexible Janus Ga2Ge2XY (X, Y = S, Se, and Te) monolayers with high carrier mobility

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-07-07 , DOI: 10.1016/j.physe.2023.115791

ArneetKaur,ShivamSharma,PradipNandi,AbirDeSarkar

Broken inversion symmetry in Janus structures leads to superior physical properties due to the emergence of a non-zero dipole moment. Ga2Ge2XY (X, Y = S, Se, Te) monolayers have been explored for their vibrational, thermal, elastic, piezoelectric and electronic properties and additionally, Rashba effect, via first-principles methods. All the phonon modes in Janus monolayers are Raman active, contrary to their pristine counterparts. The variation of isochoric heat capacity at low temperatures is quadratic, signalling the dominant contribution from the longitudinal acoustic phonon modes, analogous to the MoS2 monolayer. Young's modulus lower than that for transition metal dichalcogenides suggests greater flexibility. Janus monolayers exhibit strain tunable piezoelectricity, Rashba-spin splitting and high electron mobility. The trend in piezoelectricity and Rashba parameter follow that of vertical dipole moment (μz), electronegativity difference ratio (rΔEN) and are linearly correlated with the out-of-plane electrostatic potential difference (ΔV) between the outer layer atoms. The latter can serve as a potential descriptor for piezoelectricity and Rashba parameter. The small strain tunability of band gap, piezoelectric coefficient and Rashba parameter broadens their spectrum of applications. Our work showcases the potential of Ga2Ge2XY monolayers in the domain of piezotronics, spintronics, flexible electronics, flexible piezo-spintronics and may trigger experimental works.

Ag nanoparticles enhanced PbS QDs/graphene/Si near-infrared photodetector

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-07-08 , DOI: 10.1016/j.physe.2023.115793

JunfanWang,JunChen

This paper introduces a PbS quantum dots (QDs)/graphene/Si near-infrared (NIR) photodetector. The excellent infrared sensitivity of PbS QDs enables the device to work in the near-infrared band. At the same time, the high mobility of graphene to carriers also improves the performance of the device. The local electric field is enhanced by spin-coating a layer of silver nanoparticles (Ag NPs) on the surface of the device, thereby increasing the photocurrent of the device. The addition of silver nanoparticles improves the performance of PbS QDs/graphene/Si near-infrared photodetectors, and the photodetector has a high responsivity of 0.15 A/W for 1550 nm incident light. Under high-frequency illumination, there is still a good response time. This high-performance PbS QDs/graphene/Si structure photodetector can be widely used in near-infrared photodetection.

The third-order nonlinear optical susceptibility in an ellipsoidal core-shell quantum dot embedded in various dielectric surrounding matrices

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-07-01 , DOI: 10.1016/j.physe.2023.115784

A.Ed-Dahmouny,N.Zeiri,R.Arraoui,N.Es-Sbai,M.Jaouane,A.Fakkahi,A.Sali,K.El-Bakkari,C.A.Duque

The finite-element method (FEM) and the effective-mass approximation (EMA) were used in this study to evaluate the energy eigenvalues and describe the third-order susceptibility for third harmonic generation (THG) associated with intersubband transition in the core-shell nanodot of a GaAs core surrounded by an AlGaAs shell, embedded with three different dielectric surrounding matrices (DSMs) (PVA, PMMA, and SiO2), taking into account the local field effect caused by a DSM. The results with the geometrical factor (shell thickness sk, ellipticity degree ξ) influencing the electron-wave functions and impurity-energy spectrum, and we compare the optical THG of a single on-center donor impurity core-shell prolate QDs (CSPQDs) embedded in various DSMs. According to our theoretical investigation, in the adequate DSM, the peaks of the real and imaginary parts, as well as the modulus of THG, can be dramatically enhanced and experience a red or blue shift. Furthermore, we observed that increasing the degree of ellipticity of the nanodot results in a radical shift towards a blue-shift with a decrease in the amplitude of the resonance peaks for a silica dielectric matrix. Furthermore, we can see that the presence of donor impurities influences the type of intersubband transition for the same DSM. Such research works on nonlinear optical processes in core-shell nanostructures could've been considered for use in optical nonlinearity-based optoelectronic devices, which operates in different detection domains depending on the dielectric constant, which is affected by the DSM.

Optical spectroscopic and DFT/TD-DFT studies on a new synthesized N, S-containing organic heterocyclic

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-06-03 , DOI: 10.1016/j.physe.2023.115764

AhmedM.Hussein,YasserH.Zaki,ShaabanA.Elroby,A.M.Hassanien

This research work purposes to synthesize a novel derivative of 2-[1-(1,3-diphenyl-1H-pyrazol-4-yl)ethylidene]hydrazinyl)-4-methyl-5-phenyldiazinyl)thiazole (7), and then we measured and analyzed and analyzed its optical properties as a thin film. The chemical structure of 2-[1-(1,3-diphenyl-1H-pyrazol-4-yl)ethylidene]hydrazinyl)-4-methyl-5-phenyldiazinyl)-thiazole (PT) was confirmed by the elemental analyses and spectroscopic techniques. Thin films of (PT) were achieved by the common vacuum thermal deposition system. A field emission scanning electron microscope (FESEM) was done to analyze the surface topology analysis of the newly prepared (PT) thin films. The optical spectroscopic analysis of (PT) was performed to obtain the optical absorption and emission transitions by different mathematical analytical methods. Some important optical parameters of (PT) thin film were predicted and compared with the experimental results by using DFT/TD-DFT calculations. The wide range absorption, emission, and suitable optical band gap prove an effective example of organic dye suitable for organic electronic applications.

Electronic and optical characteristics of Silicane/GeAs van der Waals heterostructures: Effects of external electric field and biaxial strain: A first-principles study

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-05-19 , DOI: 10.1016/j.physe.2023.115759

JunzhongLiang,XianyingDai,JianjunSong,KaiwenPu,JingTang,XiaoQin,FanqiWang,YiweiGuo,TianlongZhao,TianminLei

The van der Waals heterostructure offers unusual physical properties to design novel structures for efficient optoelectronic applications. To enhance the low mobility of monolayer SiH and broaden the light absorption coefficient and range of monolayer SiH, a lattice-matched SiH/GeAs vdWh has been constructed. At the same time, the basic electronic and optical properties were investigated by first-principles calculations. The SiH/GeAs vdWh with six different structural configurations were compared, and the most stable configuration model H2 has a type-II band alignment with an indirect bandgap semiconductor value of 1.54 eV. It is associated with a strong charge transfer. Moreover, SiH/GeAs vdWh possesses anisotropic transport properties with high electron mobility along the y-direction.Interestingly, both external electric field and biaxial strain can adjust band offsets and bandgaps values. After applying vertical electric fields, The SiH/GeAs vdWh has a mutual transformation from type-I (symmetric) to type-II(staggered) to type-III(broken) band alignment, and metal-semiconductor phase transitions occurred at −0.35 and 0.15 V/Å. Besides, it's found that band alignment transition from type-II to type-I emerged under the in-plane biaxial strain of 2% and transformed indirect into direct bandgap. More importantly, tensile biaxial strain can enhance the visible-light absorption while sustaining type-II band alignment, which is favorable for photocatalysis of visible light. Our results indicate that the SiH/GeAs vdWh's moderate bandgap, excellent transport properties and optical performance may have potential applications in the field of nanoelectronic and optoelectronic devices.

Cavities in multilayer homo- and heterostructures

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-04-13 , DOI: 10.1016/j.physe.2023.115735

AlexanderV.Savin,SergeyV.Dmitriev

A two-dimensional chain model is used to analyze the equilibrium structure of cavities in a graphene/h-BN heterostructures and in a graphite crystal. The ability of the chain model to describe the configurations of layered structures is confirmed by the analysis of the stepped structures covered with a few layer sheets, for which experimental results are available. It is found that the cavities of single layer height are open at a small width and closed at a width above the threshold value. Cavities of more than one layer height are closed at ddo, and bistable in the width range do

Magnetoresistance and spin-dependent Seebeck effects in phthalocyanine-based molecular junctions with borophene electrodes

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-04-05 , DOI: 10.1016/j.physe.2023.115731

JuanYang,XuesongLiang,ZhizhouYu

The magnetoresistance and thermoelectric effects are of great interest to molecular spintronics. We have investigated the spin transport properties of two transition metal molecules sandwiched between two semi-infinite borophene electrodes based on the density functional theory and nonequilibrium Green’s function method. The perfect spin filter efficiency and giant magnetoresistance ratio are obtained at equilibrium for the manganese phthalocyanine (MnPc) and iron phthalocyanine (FePc) molecular junctions due to their half-metallic behavior. The magnetoresistance ratio of MnPc system can be maintained at around 340% when the applied bias exceeds 0.3 V. The thermoelectric currents induced by the temperature gradients also exhibit an almost perfect spin filter effect for both MnPc and FePc molecular junctions at low reference temperatures. The significant Seebeck polarization of MnPc molecular junction is obtained, which changes from 90% to −80% with the increasing reference temperature. Our results provide new insights into the design of molecular spintronic devices with two-dimensional electrode materials.

Magnetic anomalies in polyphthalocyanines with Fe-, Co- and Ni- magnetic centers

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-07-18 , DOI: 10.1016/j.physe.2023.115795

Monolayers of polypthalocyanines with embedded transition metal (Fe, Ni, Co) exhibit interesting semiconducting properties and displays half-metallic magnetic behavior simultaneously. It has a great potential for spintronic applications. The origin of the magnetocrystalline anisotropy, magnetic anisotropy energy and magnetic order that influences magnetic domain switching with applied external magnetic field for transition metal based polypthalocyanines is explored in this work utilizing spin-polarized generalized gradient approximation in the range of Quantum atomic tool kit. Magnetic moments of the TM atoms and exchange-correleation energies for ferromagnetic and anti-ferromagnetic configurations are calculated. It is found that the difference for these energies, which is proportional to magnetic anisotropy, vanishes for Ni-polypthalocyanines, and gives the real system to have both domains with ferromagnetic or anti-ferromagnetic exchange–correlation energies due to minor defects. Also, experimentally measured M-H hysteresis for Fe-PPC with an average thickness of 25 nm shows anomalous magnetic behavior: the magnetization overpasses the saturation and suppresses any further enhancement with the applied magnetic field. Ni-PPC also shows a similar weak effect at room temperature. These measurements are performed at 2.5 K and 297 K for the magnetic fields applied in the out-of-plane and in-plane directions of the surface. The derived results, where magnetic anisotropy energy for Ni-polypthalocyanines is vanished for monolayers and support the anomalies of the hysteresis, which occurs due to magnetic anisotropy in the ferromagnetic-antiferromagnetic intermixed system.

Direct Z-scheme 2D/2D heterojunction of BP/monolayer SnSe2 with photocatalytic activities: A first-principles study

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-07-03 , DOI: 10.1016/j.physe.2023.115783

SenMing,JingHuang,BinWang,MinghaoLi,LinhuaXu,JingSu

New high-efficiency photocatalysts are of great significance to solve the problems of environmental pollution and energy shortage in the world. In this paper, a Z-Scheme heterojunction of 2D/2D BP/SnSe2 heterojunction is designed, and its electronic structure and photocatalytic mechanism are systematically calculated based on first-principles calculations. The results show that BP/SnSe2 heterojunction is a direct band gap semiconductor with a band gap value of 0.69eV, and shows the intrinsic type-II staggered band alignment characteristics. A small band gap can accelerate the separation of photogenerated electrons and holes, and the built-in electric field makes the photogenerated electrons and holes transfer along the Z-scheme path, and the appropriate band edge position and high carrier mobility also show that BP/SnSe2 heterojunction is an excellent photocatalyst. In addition, the Gibbs free energy diagram also shows that BP/SnSe2 heterojunction can spontaneously complete water decomposition driven by solar energy. Finally, the effects of biaxial strain and pH value on the practical application were also studied. Therefore, we believe that BP/SnSe2 heterojunction can have a good application prospect as a new direct Z-scheme photocatalyst.

Effects on the electronic properties of multilayer phosphorene due to periodic arrays of vacancies: Band unfolding formalism

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-05-12 , DOI: 10.1016/j.physe.2023.115750

F.E.B.deSousa,F.R.V.Araújo,G.A.Farias,J.S.deSousa,D.R.daCosta

We investigate the effects of atomic vacancies on the band structure of multilayer phosphorene using a combination of the tight-binding model and the band unfolding technique. A detailed description of the used theoretical framework is illustrated for defect-free structures of monolayer, bilayer, and trilayer phosphorene with Bernal stacking, which allowed us to identify that the stability of the unfolded effective band is dependent on the size of the supercell for the N-layer phosphorene. Our results demonstrate that due to the presence of monovacancy a quasi-flat state emerges around the Fermi level and the energy difference between the lowest conduction band (or highest valence band) and the quasi-flat state depends on the position of the vacancy and its proximity to the boundary of the supercell, which can bring up consequences to the optical properties of the system. By increasing vacancy concentration, different distinguished forms of vacancy disorder are possible, by keeping or not the sublattice symmetry of the system as well as by assuming a combination of different types of vacancies and layer-localization to form the n atomic vacancies. In general, we find an almost n-fold degenerate quasi-flat state in a system with n vacancies when the sublattice symmetry or/and the inversion symmetry are broken, i.e. when the number of non-equivalent sublattice atoms in each phosphorene sheet is different. Moreover, the occurrence of atomic vacancies in the supercell affects also the energetic position of the bulk states as greater the number of vacancies that consequently leads to an increase in the broadening of the n-fold quasi-degenerate quasi-flat states. The present formalism provides an appropriate theoretical platform to investigate point defect effects on the optoelectronic properties of multilayer van der Waals materials.

Chern numbers in photoinduced heterojunction of graphene on WSe2

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-05-06 , DOI: 10.1016/j.physe.2023.115749

TayyabaAftab

Heterostructure of graphene on WSe2 is shown to have tunable Berry curvature and Chern number depending on lattice potental Δ and independent of spin orbit coupling. This tunable nonzero Berry curvature for finite Δ can be made zero by photoinducing the system.

Lieb lattices and pseudospin-1 dynamics under barrier- and well-like electrostatic interactions

Physica E: Low-dimensional Systems and Nanostructures ( IF 0 ) Pub Date : 2023-04-25 , DOI: 10.1016/j.physe.2023.115738

V.Jakubský,K.Zelaya

This work considers the confining and scattering phenomena of electrons in a Lieb lattice subjected to the influence of a rectangular electrostatic barrier. In this setup, hopping amplitudes between nearest neighbors in orthogonal directions are considered different, and the next-nearest neighbor interaction describes spin–orbit coupling. This makes it possible to confine electrons and generate bound states, the exact number of which is exactly determined for null momentum parallel to the barrier. In such a case, it is proved that one even and one odd bound state is always generated, and the number of bound states increases for non-null and increasing values of the parallel momentum. That is, current-carrying states are generated. In the scattering regime, the energies are determined so that resonant tunneling occurs. The existence of perfect tunneling energy in the form of super-Klein tunneling is proved to exist regardless of the bang gap opening. Finally, it is shown that perfect reflection appears when solutions are coupled to the intermediate flat-band solution.