960化工网
Flux growth and characterization of an FeSi4P4 single crystal†
Tongtong Yu,Huapeng Ruan,Chunlong Li,Xixia Zhang,Ning Jia
RSC Advances Pub Date : 10/12/2017 00:00:00 , DOI:10.1039/C7RA08118A
Abstract

Herein, a single crystal of FeSi4P4 (FSP) with dimensions up to 8 × 7 × 3 mm3 was successfully grown using a seeded flux growth method. Single crystal X-ray diffraction results revealed that the FSP crystal crystallized in the chiral space group P1 (no. 1). High-resolution X-ray diffraction presents a full-width at half-maximum (FWHM) of 36′′ and 46′′ for the (100) and (001) FSP crystals, respectively, which indicates that FSP crystals have high crystalline quality. FSP is thermally stable up to 1157.1 °C and has a high thermal conductivity of 35 W (m K)−1 at room temperature. The magnetic analysis shows that the FSP crystal is paramagnetic in the range from 5 to 300 K. The Hall effect measurement suggests that the FSP crystal is a promising p-type semiconductor at room temperature.

Graphical abstract: Flux growth and characterization of an FeSi4P4 single crystal
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