Abstract BiFeO3 (BFO) and ZrO2 have been deposited on p-type (100) silicon substrate by sol-gel process and rf sputtering method, respectively. Metal-ferroelectric-insulator-semiconductor capacitor has been fabricated with 100 nm BFO and 10 nm ZrO2 shows maximum memory window of 1.54 V as compared to other fabricated capacitors with 5 and 15 nm insulating layer thickness. Improvement in current density has been also observed in different thickness of buffer layer of MFIS capacitors. The improved current density of order of 10-7 A/cm2 has been observed in MF(100nm)I(10nm)S structure. It has been also observed in MF(100nm)I(10nm)S structure that no charge value degrades up to 1011 iteration cycles.